When designing the new JBX-8100F, we took a completely new approach in terms of design and performance. By building on our proven lithography system, we created the JBX-8100F from the ground up. This allowed us to implement changes on a scale which would not be possible by incremental changes. While the new exterior design with its reduced footprint might be most striking at first glance, it's the changes within the system what truly constitute a leap forward. By using non-standard parts, we increased the freedom for our engineering team to design tailor made parts with higher performance.
The results is a truly innovative lithography system with a modular design, a reduced footprint and power consumption as well as the world highest scanning speed for even the most challenging applications.
In short, the new JBX-8100FS is quite simply the most innovative lithography system we have ever built.
Version | G1 (Entry model) | G2 (Full option model) |
---|---|---|
Writing method | Spot beam, vector scan, step and repeat. | ← |
Acceleration voltage | 100 kV | 100 kV / 50 kV |
Beam current | 5 × 10-12 ~ 2 × 10-7 A | ← |
Field size | Maximum 1,000 μm × 1,000 μm | Maximum 2,000 μm × 2,000 μm |
Scanning speed | Maximum 125 MHz | ← |
Stage movable area | 190 mm × 170 mm | ← |
Overlay accuracy | ≦±9nm | ← |
Stitching accuracy | ≦±9nm | ← |
Electric requirements (Normal) | 3kVA | ← |
Substrate size | Maximum 200mmΦ wafer | ← |
Substrate transfer | Single auto loader | 12 cassettes auto loader |
Major installable Options | Optical microscope |
Subject to technical changes; errors excepted. All brand names that appear in the text are registered trademarks of the manufacturers.