Electron Beam Lithography




  • Spot beam system for direct writing and mask making
  • Large writing fields (up to 1mm x 1mm)
  • Writing area 230 mm x 230 mm
  • substrate sizes of up to 300 mm
  • Automatic single cartridge operation or loading system (option)


Electron source

ZrO/W (Schottky) emitter

Acceleration voltage

100 kV

Min. beam diameter

4 nm (100 kV)

Substrate size

Up to 300 mm

Beam shape



Vector scan

Please note:

Subject to technical changes; errors excepted. All brand names that appear in the text are registered trademarks of the manufacturers.

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