Electron Beam Lithography

JEOL JBX-3200MV

Product
Specifications
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Info

JEOL JBX-3200MV

  • High-performance system for the mask exposure down to a structure size of 28 nm
  • LaB6 cathode with shaped beam electron optics
  • Writing area 150 mm x 150 mm

Specifications

Electron source

LaB6 emitter

Acceleration voltage

50 kV

Max. beam size

< 1 µ x 1 µ

Substrate size

150 mm

Beam shape

variable

Deflection

Vector scan

Please note:

Subject to technical changes; errors excepted. All brand names that appear in the text are registered trademarks of the manufacturers.

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